Seminare
Veranstaltungsdetails
Die Seminare finden freitags, in der Regel ab 11:00 Uhr, statt.
Veranstaltungsorte:
- Standard: Seminarraum S2 mit der Raumnummer 24 C 102 (4243|102) im Rotationsgebäude Bauteil 24C [4243]
- Einige Seminare finden im Seminarraum S1 mit der Raumnummer 24 C 104 (4243|104) im Rotationsgebäude Bauteil 24C [4243] statt.
- Alternative: Konferenzraum Konf422 mit der Raumnummer 24 B 422 im Rotationsgebäude Bauteil 24B [4242]
- ZOOM: VC-Meetings, die über Weblinks erreichbar sind. Einladungen bitte per E-Mail an mailbox@cst.rwth-aachen.de anfragen.
Seminartermine
| Datum Date | Raum Room | Titel Title | Dozent(in) Speaker |
|---|---|---|---|
| t.b.a. | ZOOM | Processing and characterisation of perovskite LEDs | Jonas Tillmann |
| 24.10.2025 | ZOOM | Praktikumssvortrag | Arash Mohammadi |
| 24.10.2025 | ZOOM | Investigation and Characterization of FETs based on MOCVD WS2 | Ran Yao |
| 08.08.2025 | S2 | MOCVD and Characterization of MoS2-on-WSe2 Heterostructures towards FET Application | Youssef Abounazel |
| 01.08.2025 | S2 | Investigation and Optimization of Metal-MoS2 Contact Interface for FET | Achyuth Manoj |
| 01.08.2025 | S2 | Fabrication, optimization and characterization of area-scaled MoS2-based memristors | Norwin Ridder |
| 25.07.2025 | S2 | Impact of atmospheric exposure on (un)passivated monolayer-MoS2-based FETs | Tianyuan Yu |
| 18.07.2025 | S2 | High-Performance Enhancement-Mode GaN p-FET Fabricated with an Etch-Stop Process | Jisu Suh |
| 18.07.2025 | S2 | MOCVD of WSe2 Monolayers and Characterizations of WSe2 Thin-Film Transistors | Jiancheng Xu |
| 04.07.2025 | S2 | N-Polar growth of nitride semiconductors with MOVPE and its applications | Zheng Yee Tee |
| 04.07.2025 | S2 | Antiambipolar Transistor: A Newcomer for Future Flexible Electronics | Tong Li |
| 06.06.2025 | ZOOM | Investigation of monolayer MoS2 – FET fabrication | Stefan Kaiser |
| 06.06.2025 | ZOOM | Analysis of Optical and Electrical Properties of Transition Metal Dichalcogenide Heterostructures | Susu Zhang |
| 23.05.2025 | ZOOM | lnvestigation into NBTI parameter drift for plasma-induced damage-degraded PMOS transistors | Kexin Zhou |
| 28.03.2025 | S2 | Simulation and Characterization of Coupled Two-Dimensional Electron and Hole Gases in GaN/AlGaN/GaN Double Heterostructures | Arash Mohammadi |
| 21.03.2025 | S2 | Herstellung und Charakterisierung von selektiv abgeschiedenen quasi-vertikalen GaN-Bauelementen | Alexander Brand |
| 24.01.2025 | S2 | Investigation of 2D-Memristors: Material Choice and Area Scaling | Bor-Han Chen |
| 24.01.2025 | S2 | Device Fabrication Based on Oxidative Chemical Vapor Deposition (oCVD) of Conducting Polymers | Jiayi Shen |
| 17.01.2025 | S2 | AlGaN/GaN-Based Optoelectronic Synaptic Devices for Neuromorphic Computing | Ozan Candaş |
| 17.01.2025 | S2 | Recent Progress in Inkjet-Printed Thin-Film Transistors | Alexandros-Spyridon Asonitis |
| 10.01.2025 | S2 | The origin and mitigation of defects induced by metal evaporation in 2D | Gi-Hyun Paik |
| 10.01.2025 | S2 | The new nitrides | Cem Tarhan |
| 25.10.2024 | ZOOM | Investigating Substrate Surface Properties for Synthesis of 2D materials on Oxide substrates | Xavier Garcia |
| 25.10.2024 | ZOOM | Processing and characterization of N-polar GaN layers | Liubou Padzialioshkina |
| 11.10.2024 | S2 | Influence of MOCVD Parameters on the Electrical Properties of 2D-WSe2 | Jiancheng Xu |
| 02.10.2024 Mi / Wed 10 Uhr / 10 am | S1 | Epitaxie, Prozessierung und Charakterisierung von AIGaN-Gradientenstrukturen und GaN/AIGaN-Heterostrukturen für die Anwendung von polarisationsinduzierten Löcherdichten | Carsten Beckmann |
| 13.09.2024 | S2 | Anwendung von polarisationsinduzierten Löcherdichten | Aleksandar Ivanov |
| 23.08.2024 | S2 | Investigation of locally back-gated MOCVD-MoS2 FET | Tianyuan Yu |
| 26.07.2024 | S2 | Fabrication optimization of area-scaled MoS2-based memristors | Norwin Ridder |
| 26.07.2024 | S2 | Herstellung und Charakterisierung von selektiv abgeschiedenen quasi-vertikalen GaN-Bauelementen | Alexander Brand |
| 19.07.2024 | S2 | Neuromorphic Computing using Non-Volatile Memory | Vaishnavi Chaturvedi |
| 12.07.2024 | S2 | 25 Years of Light-Emitting Electrochemical Cells: A Flexible and Stretchable Perspective | Evrim Yagiz |
| 12.07.2024 | S2 | Charge-Carrier Recombination in Halide Perovskites | Spyridon Mavrokefalidis |
| 21.06.2024 | S2 | Gate Recess für AlGaN/GaN-Feldeffekttransistoren | Moritz Ellering |
| 14.06.2024 | S2 | Mask-set design for normally-off monolithic bidirectional GaN-based switches | Chong Peng |
| 07.06.2024 | S2 | Internship reports | Aleksandar Ivanov |
| 07.06.2024 | S2 | Towards Ultraflexible Organic Electronic Devices: Mechanical Properties and Encapsulation | Arash Mohammadi |
| 16.05.2024, 11:00 Thursday! | S2 | Thermal annealing of etch-damage in quasi-vertical Schottky diodes | Kexin Zhou |
| 02.02.2024 | S1 | Insulators for 2D nanoelectronics: the gap to bridge | Vinh Liem Do |
| 02.02.2024 | S1 | Applications of Boron Nitride (BN) in III-Nitride and 2D Technology | Zi Cheng Lai |
| 02.02.2024 | S1 | Recent progress in organic field-effect transistor-based integrated circuits | Jonas Tillmann |
| 26.01.2024 | S1 | Fabrication flow optimization of 2D-MoS2-based cross-point memristors | Bor-Han Chen |
| 26.01.2024 | S1 | GaN on foreign Substrates for Application in vertical Devices | Cengiz Kuruoglu |
| 19.01.2024 | ZOOM | Praktikum bei AIXTRON: ein Erfahrungsbericht | Martin Schmitz |
| 19.01.2024 | ZOOM | In situ optical reflectance analysis of a MOCVD process for transition metal dichalcogenides synthesis | Martin Schmitz |
| 19.01.2024 | ZOOM | Impact of cool-down conditions on the electrical performance of MOCVD 2D WSe₂ | Jülide Avci |
| 12.01.2024 | S1 | MOCVD and Characterization of MoS₂ and WSe₂ Monolayers and their Vertical Heterostructures | Susu Zhang |