Seminars
Details
The seminars are held on Fridays, usually from 11:00.
Locations :
- Standard: Seminar room S2 with room number 24 C 102 (4243|102) in Rotationsgebäude Bauteil 24C [4243]
- Some seminars take place in seminar room S1 with room number 24 C 104 (4243|104) in Rotationsgebäude Bauteil 24C [4243]
- Alternative: Conference room Konf422 with room number 24 B 422 in Rotationsgebäude Bauteil 24B [4242]
- ZOOM: VC meetings which can be joined online. Please apply for an invitation by email to mailbox@cst.rwth-aachen.de.
Seminars
| Datum Date | Raum Room | Titel Title | Dozent(in) Speaker |
|---|---|---|---|
| 24.07.2026 | S2 | A review of textile dye‑sensitized solar cells for wearable electronics | Seungyeon Kim |
| 24.07.2026 | S2 | Transfer of 2D Films: From Imperfection to Perfection | Yewon Oh |
| 23.07.2026 Thursday 9:00 | S1 | Recent advances in GaN-based power devices and integration | Yi He |
| 23.07.2026 Thursday 9:00 | S1 | AlGaN/GaN High Electron Mobility Transistors: Field Plate Architectures for High-Power and High-Frequency Applications | Daniils Lokastovs |
| 17.07.2026 | S2 | Recent progress on micro-LEDs | Tei Chun Wei |
| 17.07.2026 | S2 | Mechanisms of Resistive Switching in Two-Dimensional Monolayer and Multilayer Materials | Dong-Hwa Kim |
| 10.07.2026 | S2 | Technical Challenges and Perspectives for the Commercialization of Solution-Processable Solar Cells | Zi Jie Chew |
| 10.07.2026 | S2 | Progress and prospects of next-generation redox flow batteries | Elis Beyza Özkan |
| 26.06.2026 | ZOOM | Hydrogen technologies: Fuel cells and fuel cell vehicles (deutsch) | Moritz Ellering |
| 26.06.2026 | ZOOM | Fabrication and characterization of 2D transition metal dichalcogenide field-effect transistors with various thicknesses | Achyuth Manoj |
| 19.06.2026 | ZOOM | Entwicklung und Test eines Laser-Überwachungssystems für MOCVD-Anlagen | Aaron Krautscheid |
| 22.05.2026 | S2 | MOCVD and Characterization of WSe2-MoS2 Heterostructures toward FET Applications | Youssef Abounazel |
| 15.05.2026 | ZOOM | Impact of Device Fabrication Processes on the Electrical Properties of Field-Effect Transistors based on Monolayer Transition Metal Dichalcogenides | Stefan Kaiser |
| 13.03.2026 | ZOOM | Praktikum bei der AIXTRON SE | Aaron Krautscheid |
| 13.02.2026 | ZOOM | Bremsemissionsmessung für die kommende Euro-7-Norm | Jonas Tillmann |
| 13.02.2026 | ZOOM | Process Optimization of Quasi-Vertical GaN Junction-Barrier Schottky Diodes | Alexandros-Spyridon Asonitis |
| 06.02.2026 | S2 | Dawn of Nitride Ferroelectric Semiconductors: From Materials to Devices | Abhishek Jayachandran |
| 06.02.2026 | S2 | Inorganic Lead-based Halide Perovskites: From Fundamental Properties to Photovoltaic Applications | Maurice Meyer |
| 30.01.2026 | ZOOM | Influence of MOCVD process conditions on red InGaN micro-LED efficiency | Jakob Oehm |
| 16.01.2026 | S2 | Options for normally-off GaN HFETs | Moritz Ellering |
| 16.01.2026 | S2 | Hybrid Thin-Film Encapsulation for Flexible OLED-Displays Using Inkjet Printing and Plasma Enhanced Atomic Layer Deposition | Thomas Mohr |
| 09.01.2026 | S2 | Investigation of the Passivation for GaN Quasi-Vertical p-n Diodes | Yao Ma |
| 21.11.2025 | ZOOM | Processing and characterisation of perovskite LEDs | Jonas Tillmann |
| 31.10.2025 | S2 | Entwicklung ohmscher p-Kontakte zu 2D-Löchergasen in GaN | Max Baier |
| 24.10.2025 | ZOOM | Praktikumsvortrag | Arash Mohammadi |
| 24.10.2025 | ZOOM | Investigation and Characterization of FETs based on MOCVD WS2 | Ran Yao |
| 08.08.2025 | S2 | MOCVD and Characterization of MoS2-on-WSe2 Heterostructures towards FET Application | Youssef Abounazel |
| 01.08.2025 | S2 | Investigation and Optimization of Metal-MoS2 Contact Interface for FET | Achyuth Manoj |
| 01.08.2025 | S2 | Fabrication, optimization and characterization of area-scaled MoS2-based memristors | Norwin Ridder |
| 25.07.2025 | S2 | Impact of atmospheric exposure on (un)passivated monolayer-MoS2-based FETs | Tianyuan Yu |
| 18.07.2025 | S2 | High-Performance Enhancement-Mode GaN p-FET Fabricated with an Etch-Stop Process | Jisu Suh |
| 18.07.2025 | S2 | MOCVD of WSe2 Monolayers and Characterizations of WSe2 Thin-Film Transistors | Jiancheng Xu |
| 04.07.2025 | S2 | N-Polar growth of nitride semiconductors with MOVPE and its applications | Zheng Yee Tee |
| 04.07.2025 | S2 | Antiambipolar Transistor: A Newcomer for Future Flexible Electronics | Tong Li |
| 06.06.2025 | ZOOM | Investigation of monolayer MoS2 – FET fabrication | Stefan Kaiser |
| 06.06.2025 | ZOOM | Analysis of Optical and Electrical Properties of Transition Metal Dichalcogenide Heterostructures | Susu Zhang |
| 23.05.2025 | ZOOM | lnvestigation into NBTI parameter drift for plasma-induced damage-degraded PMOS transistors | Kexin Zhou |
| 28.03.2025 | S2 | Simulation and Characterization of Coupled Two-Dimensional Electron and Hole Gases in GaN/AlGaN/GaN Double Heterostructures | Arash Mohammadi |
| 21.03.2025 | S2 | Herstellung und Charakterisierung von selektiv abgeschiedenen quasi-vertikalen GaN-Bauelementen | Alexander Brand |
| 24.01.2025 | S2 | Investigation of 2D-Memristors: Material Choice and Area Scaling | Bor-Han Chen |
| 24.01.2025 | S2 | Device Fabrication Based on Oxidative Chemical Vapor Deposition (oCVD) of Conducting Polymers | Jiayi Shen |
| 17.01.2025 | S2 | AlGaN/GaN-Based Optoelectronic Synaptic Devices for Neuromorphic Computing | Ozan Candaş |
| 17.01.2025 | S2 | Recent Progress in Inkjet-Printed Thin-Film Transistors | Alexandros-Spyridon Asonitis |
| 10.01.2025 | S2 | The origin and mitigation of defects induced by metal evaporation in 2D | Gi-Hyun Paik |