On ICNS 2025 in Malmö (Sweden), the Best Student Award in Electronic Devices war presented to Liubou Padzialioshkina of CST for her oral presentation “Processing and Characterization of N-polar GaN/AlGaN Heterostructure Field-Effect Transistors Grown on 200 mm Sapphire Substrates”
Jiancheng Xu
“MOCVD of WSe2 Monolayers and Characterizations of WSe2 Thin-Film Transistors”
Jisuh Su
“High-Performance Enhancement-Mode GaN p-FET Fabricated with an Etch-Stop Process”
11:00 in S2
The Organizing Committee of the 48th Workshop on Compound Semiconductor Devices and Integrated Circuits and the 19th Expert Evaluation and Control of Compounds Semiconductor Materials and Technologies awards the IMEYMAT student prize for the best oral contribution to Qi Shu of CST for his contribution “Optimization of Regrown GaN Quasi-Vertical pn Diodes by Low-Power CF4 Plasma and in-situ TMGa Treatment”
