Seminars

Details

The seminars are held on Fridays, usually from 11:00.

Locations :

Standard: Seminar room S1 (new!) with room number 24 C 104 (4243|104) in Rotationsgebäude Bauteil 24C [4243]
Alternative: Conference room Konf422 with room number 24 B 422 in Rotationsgebäude Bauteil 24B [4242]
ZOOM: VC meetings which can be joined online. Please apply for an invitation by email to mailbox@cst.rwth-aachen.de.

Datum Date	Raum Room	Titel Title	Dozent(in) Speaker
22.12.2023	S1	Impact of PEALD Al₂O₃ passivation on the electrical properties of MOCVD 2D-TMDC-based field-effect transistors	Zeynep Şebnem İçtihadi
22.12.2023	S1	Investigation of metal contacts for improved performance of 2D-TMDC field-effect transistors	Tianyishan Sun
17.11.2023 (changed)	S1	Scalable Dry Transfer of 2D-TMDC Layers for Transistor Application	Amir Ghiami
17.11.2023 (changed)	S1	MOCVD of 2D-TMDC: Nucleation, Lateral Growth, and Vertical Heterostructures	Songyao Tang
27.10.2023	S1	Development and investigation of low-damage n-GaN recess-etching processes	David Schippers
27.10.2023	S1	Working on a new generation G10-GaN industrial MOCVD reactor	Liubou Padzialioshkina
21.07.2023	S2	Correlating electrical performance of MoS₂-based field-effect transistors passivated with PEALD Al₂O₃ under different conditions	Zeynep Şebnem İçtihadi
14.07.2023 10 Uhr / 10 am	ZOOM	Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and Heterogeneous Integration	Yunho Choi
14.07.2023 10 Uhr / 10 am	ZOOM	Recent progress of organic light-emitting diode microdisplays for augmented reality/virtual reality applications	Milen Nachev
07.07.2023	S2	Entwicklung von Gasphasendepositionsprozessen zur Herstellung von Übergangsmetalldichalkogenid-Monolagen und -Heterostrukturen für optoelektronische Bauelemente	Annika Grundmann
30.06.2023	S2	Hardware and Information Security Primitives Based on 2D Materials and Devices	Yuhui Li
30.06.2023	S2	High-performance quasi-2D perovskite light-emitting diodes from materials to devices	Jonas Thün
26.05.2023	S2	AlGaN/GaN HFET with C-doped back-barrier	Yingxin Li
05.05.2023	S2	Process optimization for fabrication of field-effect transistors (FET) based on 2-dimensional transition metal dichalcogenides (2D-TMDC)	Tianyishan Sun
21.04.2023 10:00	ZOOM	Internship at AIXTRON SE	Haonan Tang
21.04.2023 10:00	ZOOM	MOCVD of WS₂ on various substrates	Haonan Tang
17.03.2023	ZOOM	Comparison of Mesa Isolation by Dry-Etching and Ion Implantation for GaN-Devices	Sybren d'Avis
10.03.2023	S2	Prozess-Entwicklung für dielektrische Interconnects auf GaN	Denise Götschenberg
03.03.2023	ZOOM	Charge Trapping in GaN Power Transistors: Challenges and Perspectives	Nahid Khan
03.03.2023	ZOOM	Investigation of Selective GaN Etching Processes for Regrowth-Based Normally-Off Devices	René Sandbote
03.03.2023	ZOOM	Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress	Markus Beschow
17.02.2023	S2	Statistical investigation of dislocation induced leakage current paths in AlGaN/GaN HEMT structures on Si and the impact of growth conditions	Yichao Yang
17.02.2023	S2	Engineered 2D materials for optical bioimaging and path toward therapy	Henki Xhepa
10.02.2023	S2	Investigation of SiN_x Passivation for AlGaN/GaN Heterostructures	Liubou Padzialioshkina
10.02.2023	S2	Storage Capacity of Long Persistent Phosphors	Victor Sulzbach
03.02.2023	S2	III-N Technologies for Quantum Computing Applications	Umut Kocak
03.02.2023	S2	Development and characterization of GaN-based memory cells	Arno Kirchbrücher
20.01.2023	S2	Toxicity of lead: What are the prospects for perovskite solar cells?	Andreas Ost
20.01.2023	S2	Size-Tunable Microlight-Emitting Diodes Using Sapphire Nanomembranes	Elif Merve Özalp