Nitride MOCVD

The research activities in the field of nitride semiconductor deposition are currently focused on the exploration of layer structures and novel concepts for electronic and optoelectronic devices. This includes:

• Growth of heterostructures inducing 2-dimensional electron and hole gases for harsh environment electronics
• Thin-barrier and thin-channel heterostructures for high-speed transistors
• High-mobility GaN “bulk” growth for power device drift regions
• Selective area epitaxy for low resistance p- and n-type ohmic contacts as well as p-GaN gate regrowth for planar and vertical power transistors
• Growth of superlattice structures for optical components like distributed Bragg reflectors (DBR) and modulators