Two-dimensional materials such as the transition metal dichalcogenide molybdenum disulphide (MoS2) possess unique properties turning them interesting for scientific research and for electronics, optoelectronics, sensors and photovoltaics. In particular, the two-dimensional direct semiconductor MoS2 is predestined for the use in ultra-thin electronic and optoelectronic components. A large number of such applications have already been demonstrated as proof-of-concept with promising results.
Currently, the largest challenge with regard to 2D materials lies in their production. There is a lack of a process for reproducible, homogeneous and large-scale deposition, which in turn complicates the development of components and circuits and an implementation in existing technologies such as CMOS. The most promising method of deposition is metal-organic vapor phase epitaxy (MOVPE). Together with AIXTRON SE, we are developing a MOVPE process for the deposition of 2D MoS2 and 2D-WS2 on a commercial platform as well as associated characterization and processing technology.