Author Archives: Holger Kalisch

Semiconductor Today features Nitrogen-polar III-N HFETs on 200 mm sapphire substrates by CST, HFE and AIXTRON

Nitrogen-polar III-N HFETs on 200mm sapphire substrates

CST Seminars

Thomas Mohr
“Hybrid Thin-Film Encapsulation for Flexible OLED-Displays Using Inkjet Printing and Plasma Enhanced Atomic Layer Deposition”

Moritz Ellering
“Options for normally-off GaN HFETs”

11:00 in S2

CST Seminars

Yao Ma
“Investigation of the Passivation for GaN Quasi-Vertical p-n Diodes”

11:00 in S2